MIXER CIRCUIT
申请公布号:KR20060017644(A)
申请号:KR20057023894
申请日期:2005.12.12
申请公布日期:2006.02.24
发明人:OHMI TADAHIRO;NISHIMUTA TAKEFUMI;MIYAGI HIROSHI;SUGAWA SHIGETOSHI;TERAMOTO AKINOBU
分类号:H01L27/092;H03D7/12;H01L21/8238;H01L29/04;H01L29/10;H03D7/14
主分类号:H01L27/092
摘要:A mixer circuit is configured by use of a CMOS transistor (800), which comprises a combination of a p-channel MOS transistor (840A) and an n-channel MOS transistor (840B) each including a semiconductor substrate (810A,810) having at least two crystal surfaces and also including a gate insulation film (820A) located on the semiconductor substrate and formed for the at least two crystal surfaces, wherein the channel width of a channel formed in the semiconductor substrate along the gate insulation film is shown by the total sum of the channel widths of channels formed for the at least two crystal surfaces. This configuration can reduce 1/f noise occurring in the transistor elements, DC offsets occurring in output signals due to variations of the electric characteristics of the transistor elements, and signal distortions based on a channel length modulation effect.
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