In-situ surface treatment for memory cell formation
申请公布号:US2005227382(A1)
申请号:US20040817131
申请日期:2004.04.02
申请公布日期:2005.10.13
发明人:HUI ANGELA T.
分类号:H01L21/00;H01L21/311;(IPC1-7):H01L21/66
主分类号:H01L21/00
摘要:A system and methodology are disclosed for forming a passive layer on a conductive layer, such as can be done during fabrication of an organic memory cell, which generally mitigates drawbacks inherent in conventional inorganic memory devices. The passive layer includes a conductivity facilitating compound, such as copper sulfide (Cu<SUB>2</SUB>S), which is generated from an upper portion of a conductive material. The conductive material can serve as a bottom electrode in the memory cell, and the upper portion of the conductive material can be transformed into the passive layer via treatment with a plasma generated from fluorine (F) based gases.
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