还原金属氧化物以及半导体元件之金属构件表面的金属氧化物之方法
申请公布号:TW200525043
申请号:TW094102304
申请日期:2005.01.26
申请公布日期:2005.08.01
发明人:刘埃森
分类号:C22B5/00
主分类号:C22B5/00
代理人:洪澄文;颜锦顺
地址:新竹市新竹科学工业园区力行六路8号
摘要:本发明系有关于一种还原金属氧化物的方法,包括:提供一金属氧化物,提供一作为载体之超临界流体或近超临界流体,于上述作为载体之超临界流体或近超临界流体中加入一具有还原性之超临界流体或近超临界流体作为还原剂,以及使上述包含具有还原性之超临界流体或近超临界流体的超临界流体或近超临界流体载体接触金属氧化物,并将其还原。上述作为载体与还原剂之超临界流体或近超临界流体乃具有相近之临界温度及压力条件,以使两者于还原金属氧化物时均呈现超临界流体或近超临界流体的状态。
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