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Method of manufacturing semiconductor device
申请公布号：US2005106857(A1)
申请号：US20040878478
申请日期：2004.06.29
申请公布日期：2005.05.19
发明人：MIN WOO S.
分类号：H01L21/28;H01L21/768;H01L31/0328;(IPC1-7):H01L31/032
主分类号：H01L21/28
摘要：The present invention relates to a method of manufacturing a semiconductor device. A barrier metal layer for blocking a metal material from being diffused into an insulating film is formed by means of an ALD method. At this time, the barrier metal layer is formed to have an amorphous structure and the barrier metal layer at the bottom of a contact hole or a via hole is selectively removed so that the barrier metal layer having good anti-diffusion properties even in a thin thickness is obtained. Therefore, it is possible to prevent resistance from increasing due to the barrier metal layer.
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