COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND HIGH-FREQUENCY MODULE,申请号JP20020005553-传众专利搜索

COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND HIGH-FREQUENCY MODULE

申请公布号：JP2003209125(A)

申请号：JP20020005553

申请日期：2002.01.15

申请公布日期：2003.07.25

申请人：

HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD

发明人：TERANO AKIHISA;OTA HIROSHI;OUCHI KIYOSHI;MISHIMA TOMOYOSHI

分类号：H01L21/822;H01L21/338;H01L27/04;H01L29/47;H01L29/778;H01L29/812;H01L29/872;(IPC1-7):H01L21/338

主分类号：H01L21/822

摘要：PROBLEM TO BE SOLVED: To provide a compound semiconductor device provided with a Shottky electrode permitting a high Shottky barrier height with respect to an In- contained compound semiconductor layer and a method of manufacturing the same, and also to provide a high-frequency module mounted with the compound semiconductor device. SOLUTION: On the In-contained compound semiconductor 15, the Schottky electrode 20 is formed by depositing Zn (p-type impurity-contained layer 19), Ta (high melting point metal layer), and a low resistance conductor layer in this order from the bottom. Then, annealing is performed to diffuse the Zn in the semiconductor to turn only a part of the surface of the semiconductor layer which is applied with the Shottky electrode metal into p-type. For the p-type impurity-contained layer, a compound of Zn and elements constituting the In-contained compound semiconductor can be used instead of a simple substance Zn. For the high melting point metal layer, not only Ta but also an intermetallic compound of Ta and the elements constituting the In-contained compound semiconductor, an alloy of Zn and Ta, or the like can be used. COPYRIGHT: (C)2003,JPO