Methods for reducing the curvature in boron-doped silicon micromachined structures

申请公布号：US2003138588(A1)

申请号：US20020334588

申请日期：2002.12.30

申请公布日期：2003.07.24

申请人：

CABUZ CLEOPATRA;GLENN MAX C.;ERDMANN FRANCIS M.;HORNING ROBERT D.

发明人：CABUZ CLEOPATRA;GLENN MAX C.;ERDMANN FRANCIS M.;HORNING ROBERT D.

分类号：B81B3/00;B81C1/00;H01L21/308;H01L29/84;(IPC1-7):B32B9/00

主分类号：B81B3/00

摘要：Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.

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