Resist mask for measuring the accuracy of overlaid layers,申请号US20020196379-传众专利搜索

Resist mask for measuring the accuracy of overlaid layers

申请公布号：US2002177317(A1)

申请号：US20020196379

申请日期：2002.07.17

申请公布日期：2002.11.28

申请人：

MINAMI AKIYUKI;MACHIDA SATOSHI

发明人：MINAMI AKIYUKI;MACHIDA SATOSHI

分类号：H05K1/02;G03F7/20;G03F7/26;H01L21/02;H01L21/027;H01L21/68;H01L23/12;H01L23/544;(IPC1-7):H01L21/302;H01L21/461

主分类号：H05K1/02

摘要：A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.