SEMICONDUCTOR LASER DEVICE HAVING A DIFFRACTION GRATING ON ALIGHT EMISSION SIDE,申请号CA20022374602-传众专利搜索

SEMICONDUCTOR LASER DEVICE HAVING A DIFFRACTION GRATING ON ALIGHT EMISSION SIDE

申请公布号：CA2374602(A1)

申请号：CA20022374602

申请日期：2002.03.04

申请公布日期：2002.11.01

申请人：

THE FURUKAWA ELECTRIC CO., LTD.

发明人：TSUKIJI, NAOKI;FUNABASHI, MASAKI;YOSHIDA, JUNJI

分类号：H01S3/094;H01S3/0941;H01S5/10;H01S5/12;H01S5/125;H01S5/14;(IPC1-7):H01S5/10;H01S5/065

主分类号：H01S3/094

摘要：A semiconductor device and method for providing a light source suitable for use as a pumping light source in a Raman amplification system are provided. The devic e upon which the method is based includes an active layer configured to radiate light; a light reflecting facet positioned on a first side of the active layer; a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet; and a partial diffraction grating having a predetermin ed length and positioned on a light emission side of the resonator. The predetermined leng th of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavit y, or in relation to a coupling coefficient .kappa.i of the partial diffraction grating.