Semiconductor memory device having stable wordline operations
申请公布号:US2001019513(A1)
申请号:US20010800207
申请日期:2001.03.06
申请公布日期:2001.09.06
发明人:JO SUNG-KUE
分类号:G11C8/08;(IPC1-7):G11C8/00
主分类号:G11C8/08
摘要:Disclosed is a semiconductor memory device comprising: a memory cell array formed of cell blocks arranged in matrix of row and column; sub wordline drivers, interposed between the cell blocks arranged along column direction, each for driving a row of the cell blocks in response to a wordline drive signal; and wordline drive signal generators, disposed between the sub wordline drivers arranged along row direction, each for providing the wordline drive signal to the corresponding sub wordline driver. The wordline drive signal generators have different drive capabilities depending upon the number of wordline drivers to be driven by the generators.
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