MOS transistor with high-K spacer designed for ultra-large-scale integration

申请公布号：US6271563(B1)

申请号：US19980122815

申请日期：1998.07.27

申请公布日期：2001.08.07

申请人：

ADVANCED MICRO DEVICES, INC.

发明人：YU BIN;LIN MING-REN

分类号：H01L21/336;H01L29/423;H01L29/49;(IPC1-7):H01L29/76;H01L29/94;H01L31/062

主分类号：H01L21/336

摘要：A MOS transistor having a source and drain extension that are less than 40 nanometers in thickness to minimize the short channel effect. A gate includes a high-K dielectric spacer layer to create depletion regions in the substrate which form the drain and source extensions.

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