AVALANCHE PHOTODIODE,申请号DE19823278660-传众专利搜索

AVALANCHE PHOTODIODE

申请公布号：DE3278660(D1)

申请号：DE19823278660

申请日期：1982.09.28

申请公布日期：1988.07.14

申请人：

FUJITSU LIMITED

发明人：MIKAWA, TAKASHI;KAGAWA, SHUZO;HONMA, KATSUJI;KANEDA, TAKAO

分类号：H01L31/107;(IPC1-7):H01L31/10

主分类号：H01L31/107

摘要：A practical germanium avalanche photodiode (Ge APD) for use with 1.5 mu m band light with which a silica optical fibre has a minimum transmission loss is provided by forming a reach-through type Ge APD having a P<+>NN<-> structure. Typically the photodiode includes an N<-> type substrate 1 with a P<+> type region 2 in the substrate and adjacent its surface with an N type region 3 interposed between the P<+> type region 2 and the N<-> type region 1. Preferably the P<+> type region 2 and the N type region 3 are surrounded by a P type region 4 forming a guard ring. It is further preferred that the doping concentration of the N<-> type region 1 is below 1 x 10<1><5> cm<-><3> and the doping of the N type region 3 is between 1 x 10<1><6> and 1 x 10<1><7> cm<-><3>.