HETEROJUNCTION BIPOLAR TRANSISTOR HAVING WIDE BANDGAP, LOW INTERDIFFUSION BASE-EMITTER JUNCTION,申请号WO1998US18686-传众专利搜索

HETEROJUNCTION BIPOLAR TRANSISTOR HAVING WIDE BANDGAP, LOW INTERDIFFUSION BASE-EMITTER JUNCTION

申请公布号：WO9917372(A1)

申请号：WO1998US18686

申请日期：1998.09.08

申请公布日期：1999.04.08

申请人：

THE NATIONAL SCIENTIFIC CORP.;EL-SHARAWY, EL-BADAWY, AMIEN;HASHEMI, MAJID, M.

发明人：EL-SHARAWY, EL-BADAWY, AMIEN;HASHEMI, MAJID, M.

分类号：H01L29/73;H01L21/331;H01L29/267;H01L29/737;(IPC1-7):H01L29/72

主分类号：H01L29/73

摘要：A heterojunction bipolar transistor (20) is provided with a silicon (Si) base region (34) that forms a semiconductor junction with a multilayer emitter (38) having a thin gallium arsenide (GaAs) emitter layer (36) proximate the base region (34) and a distal gallium phosphide emitter layer (40). The GaAs emitter layer (36) is sufficiently thin, preferably less than 200 ANGSTROM , so as to be coherently strained.