Semiconductor device e.g. DRAM with fuse,申请号DE1996119737-传众专利搜索

Semiconductor device e.g. DRAM with fuse

申请公布号：DE19619737(A1)

申请号：DE1996119737

申请日期：1996.05.15

申请公布日期：1997.06.05

申请人：

MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP

发明人：TSUKUDE, MASAKI, TOKIO/TOKYO, JP;ARIMOTO, KAZUTAMI, TOKIO/TOKYO, JP

分类号：H01L21/60;H01L21/768;H01L21/82;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;(IPC1-7):H01L23/525

主分类号：H01L21/60

摘要：An interlayer insulation layer (2) covers the fuse layer (1). In the insulating layer is located a concave section (2a) with an aperture width (W1), exceeding the two-dimensional width of the fuse layer. The concave section lies on the insulating layer surface directly above the fuse layer. On the insulation layer is deposited a passivating layer (4) with a first aperture (4R) directly above the fuse layer, exposing the bottom face of the concave section. The aperture has a second width (W2), smaller than the first one.