Circuitry and method for programming and erasing a non-volatile semiconductor memory,申请号US19930100508-传众专利搜索

Circuitry and method for programming and erasing a non-volatile semiconductor memory

申请公布号：US5513333(A)

申请号：US19930100508

申请日期：1993.09.15

申请公布日期：1996.04.30

申请人：

INTEL CORPORATION

发明人：KYNETT, VIRGIL N.;FANDRICH, MICKEY L.

分类号：G11C17/00;G06F12/00;G11C16/02;G11C16/10;G11C16/34;(IPC1-7):G11C16/06

主分类号：G11C17/00

摘要：Circuitry for programming a non-volatile semiconductor memory is described. The circuitry includes a circuit for enabling the non-volatile semiconductor memory to program a bit of the non-volatile semiconductor memory. The enabling circuit causes the bit to be programmed according to a pattern bit. The circuitry also includes a second enabling circuit, which enables the non-volatile semiconductor memory to verify the programming of the bit. Circuitry for erasing a non-volatile semiconductor memory is disclosed. A method for programming a nonvolatile semiconductor memory is also described.