Compound semiconductor device.,申请号EP19920114718-传众专利搜索

Compound semiconductor device.

申请公布号：EP0539690(A2)

申请号：EP19920114718

申请日期：1992.08.28

申请公布日期：1993.05.05

申请人：

ROHM CO., LTD.

发明人：NAKAGAWA, YOSHIKAZU

分类号：H01L29/812;H01L21/338;H01L29/08;H01L29/36;H01L29/778

主分类号：H01L29/812

摘要：<p>A compound semiconductor device includes an undoped semiconductor layer; a doped semiconductor layer formed on the undoped semiconductor layer and having smaller electron affinity than the undoped semiconductor layer, impurities being doped in the doped semiconductor layer; a gate electrode formed on the doped semiconductor layer; and a source electrode and a drain electrode respectively formed at both sides of the gate electrode, wherein an impurity concentration of the doped semiconductor layer is selected such that a portion of the doped semiconductor layer located immediately below the gate electrode is not completely depleted in a state in which a gate voltage is not applied to the gate electrode, and is completely depleted in a state in which a negative voltage for minimizing a noise figure is applied to the gate electrode. <IMAGE></p>