Removal of etching mask in semiconductor or - prodn,申请号DE19691911169-传众专利搜索

Removal of etching mask in semiconductor or - prodn

申请公布号：DE1911169(A1)

申请号：DE19691911169

申请日期：1969.03.05

申请公布日期：1970.09.17

申请人：

AKTIENGESELLSCHAFT BROWN,BOVERI & CIE

发明人：DENIS CLERC,DIPL.-PHYS.

分类号：G03F7/42;H01L21/311;H01L23/29

主分类号：G03F7/42

摘要：<p>In an intermediate production stage of a semiconductor device with an inverse voltage of at least 800V an etching mask consisting of a lacquer, polymerized by ultraviolet rays, has to be removed. This is done by treating the active part of the semiconductor with concentrated or fuming nitric acid, followed by rinsing in water and drying.</p>