Method of manufacture for semiconductor accelerometer,申请号US19850780933-传众专利搜索

Method of manufacture for semiconductor accelerometer

申请公布号：US4706374(A)

申请号：US19850780933

申请日期：1985.09.27

申请公布日期：1987.11.17

申请人：

NISSAN MOTOR CO., LTD.

发明人：MURAKAMI, KOICHI

分类号：F16C11/12;G01P15/08;G01P15/12;G01P15/125;H01L21/3063;H01L29/84;(IPC1-7):H01L21/467

主分类号：F16C11/12

摘要：An improved method of manufacturing a semiconductor accelerometer having a cantilevered beam is shown. In the fabricating process a semiconductor substrate is divided into p-type regions and n-type regions. The substrate is immersed into an electrochemical solution with a cathode and a suitable voltage is applied. Certain portions of the substate are protected from the etching by the voltage such that the semiconductor substrate is etched to form the cantilevered beam.