MANUFACTURE OF SEMICONDUCTOR DEVICE,申请号JP19850045305-传众专利搜索

MANUFACTURE OF SEMICONDUCTOR DEVICE

申请公布号：JPS61203655(A)

申请号：JP19850045305

申请日期：1985.03.07

申请公布日期：1986.09.09

申请人：

NEC CORP

发明人：YOSHIKAWA KIMIMARO

分类号：H01L23/522;H01L21/768;(IPC1-7):H01L21/88

主分类号：H01L23/522

摘要：PURPOSE:To prevent the inter-layer short-circuit of the multi-layer wiring by a method wherein a solid and dense alumina film is formed on the surface of an aluminum wiring layer having undergone patterning with oxygen plasma. CONSTITUTION:An oxide film 2 is formed on a silicon substrate 1 on which an element region have been formed. Aluminum wiring 3 which has been formed by evaporation or sputtering, and patterned is provided on this film. Then, the whole substrate is made to react in a plasma vapor containing oxygen gas to form an aluminum film 4 by oxidizing the surface of the aluminum wiring. Then, the substrate is heat-treated in nitrogen atmosphere to provide the ohmic contact between the aluminum wiring 3 and the substrate 1. Then, a chemical vapor growth oxide film 5 is laminated as an inter-layer insulation film. A through-hole is opened in the plasma vapor containing CF4 with a mask of photo-resist to expose a part of the aluminum wiring 3. Then, approx. 1mu of the second aluminum wiring 6 is formed by vaporing or sputtering method and undergoes the patterning.