THIN FILM FIELD EFFECT TRANSISTOR UTILIZING A POLYPNICITIDE SEMICONDUCTOR,申请号AU19850043416-传众专利搜索

THIN FILM FIELD EFFECT TRANSISTOR UTILIZING A POLYPNICITIDE SEMICONDUCTOR

申请公布号：AU4341685(A)

申请号：AU19850043416

申请日期：1985.06.07

申请公布日期：1985.12.19

申请人：

STAUFFER CHEMICAL CO.

发明人：ROZALIE SCHACHTER;MARCELLO VISCOGLIOSI;LEWIS ANDREW BUNZ

分类号：H01L21/205;H01L21/314;H01L21/338;H01L21/363;H01L27/12;H01L29/12;H01L29/24;H01L29/49;H01L29/51;H01L29/78;H01L29/786;H01L29/812;H01L51/00;H01L51/05;H01L51/40

主分类号：H01L21/205

摘要：A thin film transistor characterised in that it comprises, as a switched semiconductor portion thereof, a thin film comprising MPx wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity is disclosed. A process for the production of a transistor characterised in that it comprises vacuum plasma sputtering of successive layers in contact of a semiconductor comprising MPx, wherein M represents at least one alkali metal; P represents at least one pnictide, and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is also disclosed. An insulated semidconductor device characterised in that it comprises as the switched semiconductor portion thereof a layer comprising MPx, wherein M represents at least one alkali metal; P; represents at least one pnictide; and x ranges from 15 to infinity: and an insulating layer comprising a pnictide is further disclosed. Referring to the accompanying illustrative diagram, a Schottlky barrier thin film field effect transistor in accordance with the present invention may comprise a glass substrate (20), a high pnictide polypnictide semiconductor (22) of high resistivity, a metal (approximately 1% Ni) doped layer (24) of the same semiconductor material of lower resistivity and metal source (26), gate (28) and drain (30) contacts deposited on layer (24). The present invention provides advances over the prior art.