PARTIAL PLATING METHOD OF SEMICONDUCTOR LEAD FRAME,申请号JP19840038763-传众专利搜索

PARTIAL PLATING METHOD OF SEMICONDUCTOR LEAD FRAME

申请公布号：JPS60183757(A)

申请号：JP19840038763

申请日期：1984.03.02

申请公布日期：1985.09.19

申请人：

DAINIPPON INSATSU KK

发明人：HASHIMOTO TAKAO

分类号：H01L23/50;H01L21/48

主分类号：H01L23/50

摘要：PURPOSE:To perform metal partial plating of stable quality efficiently and moreover economically by a method wherein a nonconductively elastic body to block the side of a mountain part is applied from the back of a lead frame elemental body, a mask having the prescribed opening on the whole surface at the mountain part is adhered closely to the elemental body, and plating is performed. CONSTITUTION:The side of the mountain part 2 of a lead frame elemental body 1 for semiconductor is shut up according to a nonconductively elastic body replica 19 formed previously by templating using the lead frame, and moreover, the elemental body 1 is constructed of a nonconductive material, set up on an opening forming mask 16 having the opening part (the part to be plated) of the prescribed pattern, and from the back of the elemental body 1, the replica is contact bonded to be supported from the back according to a press board 13 through a nonconductively elastic body 12. Thereupon, plating is performed using the lead frame elemental body 1 as a cathode, while using an unsolvable electrode as an anode 14, and jetting a plating liquid 15 from the under side and flowing a current.