MANUFACTURE OF SEMICONDUCTOR DEVICE,申请号JP19820186120-传众专利搜索

MANUFACTURE OF SEMICONDUCTOR DEVICE

申请公布号：JPS5975643(A)

申请号：JP19820186120

申请日期：1982.10.25

申请公布日期：1984.04.28

申请人：

OKI DENKI KOGYO KK

发明人：TAMURA HIROYUKI

分类号：H01L21/76;H01L21/331;H01L21/762;H01L29/73

主分类号：H01L21/76

摘要：PURPOSE:To reduce intrusion to an active region of a field oxide film, and to improve the degree of integration by forming an oxidation-resisting first mask layer on the surface of an epitaxial layer opposite to a high-concentration impurity region in double layer constitution of an oxide film and a nitride film formed on the oxide film in the manufacturing process of the bipolar type semiconductor device through a selective oxidation method. CONSTITUTION:An oxide film 14 formed to the surface layer section of the epitaxial layer 8 not coated with an oxidation-resisting first mask 10a through thermal oxidation is removed until the shoulder section 15 of the mesa-shaped layer 8 is exposed, and the thin oxide film 16 is left. The nitride film 17 in 50- 150Angstrom is formed on the shoulder section 15 as a second oxidation-resisting mask through thermal nitriding while using the film 16 as a mask. The thick field oxide film 11 deeply buried in the layer 8 is grown through oxidation in a wet oxygen atmosphere. Intrusion to the active region 12 of the film 11 is inhibited by the thermal nitride film 17 at that time. A nitride film 10, an oxide film 9 and the thermal nitride film 17 are removed, and the active region 12 and a field region 13 are formed.