THIN FILM PHOTOELECTRIC CONVERTER,申请号JP19820045878-传众专利搜索

THIN FILM PHOTOELECTRIC CONVERTER

申请公布号：JPS58162055(A)

申请号：JP19820045878

申请日期：1982.03.23

申请公布日期：1983.09.26

申请人：

NIPPON DENKI KK

发明人：KAJIWARA YUUJI

分类号：H01L27/146;H01L31/10

主分类号：H01L27/146

摘要：PURPOSE:To improve the photoelectric property, cost and reliability of a thin film photoelectric converter by forming a transparent insulating layer between an opaque conductive film formed directly on a substrate and individual electric signal producing electrodes and coating a protecting film on the wiring and photoelectric converting material film formed on the upper surface of the substrate sufficiently thicknely. CONSTITUTION:An opaque metal layer 12 is deposited on a transparent substrate 11 made of glass, a strip hole is opened, a transparent insulating layer 14 is sputtered, and formed wider than the layer 12. Then, a transparent conductive layer 13 is formed, and common electrodes are formed. Further, an amorphous silicon film 15 is further formed, individual high density wiring electrodes 26 for producing electric signals are extended toward the layer 13, and a bit of a photoelectric converter is formed. Since the photoelectric converter of this structure receives an image luminous flux 10 from an original from below the substrate 11, a structure sufficiently shielding not to mix unnecessary light signal current from except the hole of the layer 12 can be formed. In this manner, eve if an image luminous flux 10 over wide range exists, a sensor of high resolution can be obtained.