SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF,申请号KR20070066025-传众专利搜索

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

申请公布号：KR20090002567(A)

申请号：KR20070066025

申请日期：2007.07.02

申请公布日期：2009.01.09

申请人：

LG INNOTEK CO., LTD.

发明人：SON, SUNG JIN

分类号：H01L33/00A01;H01L33/00A02

主分类号：H01L33/00A01

摘要：A nitride semiconductor light emitting diode and a manufacturing method thereof are provided to improve the luminous efficiency by suppressing the generation of defect within the active layer. A nitride semiconductor light emitting diode(200) comprises a substrate(201), an N-type contact layer(220), an InGaN relief layer(230), an active layer(240) and a p-type contact layer(260). The n-type contact layer is formed on the top of the substrate. The InGaN relief layer is formed on the n-type contact layer. The active layer is formed on the InGaN relief layer. The active layer successively independently can have the well layer and the barrier layer. The InGaN relief layer can improve the crystalline of the active layer by suppressing the strain relax or the V-pits generation between the well layer and the barrier layer.