MANUFACTURE OF NONVOLATILE SEMICONDUCTOR STORAGE DEVICE,申请号JP19990167828-传众专利搜索

MANUFACTURE OF NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

申请公布号：JP2000357753(A)

申请号：JP19990167828

申请日期：1999.06.15

申请公布日期：2000.12.26

申请人：

MATSUSHITA ELECTRIC IND CO LTD;HALO LSI DESIGN & DEVICE TECHNOL INC

发明人：YAMANAKA MICHINARI;KATO JUNICHI;HORI ATSUSHI;YAMAGUCHI MINEO;OGURA SEIKI

分类号：H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824

主分类号：H01L21/8247

摘要：PROBLEM TO BE SOLVED: To provide a method for manufacturing a nonvolatile semiconductor storage device which causes no damage at etching time for forming a difference in level in a substrate. SOLUTION: This method is for manufacturing a nonvolatile semiconductor storage device, which is provided with an insulation film 3 formed on a silicon substrate 1, having a difference in level and a floating gate electrode 4 and a control gate electrode 6, which are formed on the insulation film 3. The surface of the silicon substrate 1 having a (100) plane for the outermost surface is partially covered with a resist mask 2. The exposed part of the silicon surface is etched through a wet etching method using a KOH aqueous solution, etc., to form a difference in level in the silicon substrate with a (111) plane exposed on a sidewall. Next, the resist mask 2 is removed to form an insulating film 3 on the inner face of the recessed section of the silicon substrate 1. On the insulating film 3, a floating gate 4 and a control gate 6 are formed so as to stride over the difference in level.