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Method of producing diffused junctions in planar semiconductive devices and productthereof

申请公布号:GB1121737(A)

申请号:GB19660032627

申请日期:1966.07.20

申请公布日期:1968.07.31

申请人:
GENERAL ELECTRIC COMPANY

分类号:H01L21/00;H01L21/18;H01L21/22;H01L29/00;H01L29/02;H01L29/86

主分类号:H01L21/00

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