InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

申请公布号：EP1885001(A1)

申请号：EP20060741988

申请日期：2006.05.26

申请公布日期：2008.02.06

申请人：

LATTICE POWER (JIANGXI) CORPORATION

发明人：FANG, WENQING;XIONG, CHUANBING;WANG, LI;JIANG, FENGYI;ZHOU, MAOXING;LIU, HECHU

分类号：H01L33/00;H01L33/06;H01L33/10;H01L33/12;H01L33/16;H01L33/32;H01L33/36;H01L33/40

主分类号：H01L33/00

摘要：<p>There is provided an InGaAIN light-emitting device and a manufacturing method thereof. The light emitting device includes a conductive substrate having a main surface and a back surface, a metal bonding layer formed on the main surface of the substrate, a light reflecting layer formed on the bonding layer, a semiconductor multilayer structure including at least a p-type and an n-type InGaAlN layer disposed on the reflecting layer, the p-type InGaAlN layer directly contacting the reflecting layer, and ohmic electrodes disposed on said n-type InGaAlN layer and on the back surface of the conductive substrate, respectively.</p>

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