Method for manufacturing semiconductor device, and semiconductor device and electronic device,申请号US20080230277-传众专利搜索

Method for manufacturing semiconductor device, and semiconductor device and electronic device

申请公布号：US2009008715(A1)

申请号：US20080230277

申请日期：2008.08.27

申请公布日期：2009.01.08

申请人：

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人：YAMAZAKI SHUNPEI

分类号：H01L29/10

主分类号：H01L29/10

摘要：It is an object of the present invention to manufacture a semiconductor device easily and to provide a semiconductor device whose cost is reduced. According to the present invention, a thin film integrated circuit provided over a base insulating layer can be prevented from scattering by providing a region where a substrate and the base insulating layer are attached firmly after removing a peeling layer. Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily. In addition, since a semiconductor device is manufactured by using a substrate except a silicon substrate according to the invention, a large number of semiconductor devices can be manufactured at a time and a semiconductor device whose cost is reduced can be provided.