SEMICONDUCTOR DEVICE,申请号JP20160027587-传众专利搜索

SEMICONDUCTOR DEVICE

申请公布号：JP2016149557(A)

申请号：JP20160027587

申请日期：2016.02.17

申请公布日期：2016.08.18

申请人：

SEMICONDUCTOR ENERGY LAB CO LTD

发明人：SEKINE YUSUKE;SHIONOIRI YUTAKA;KATO KIYOSHI;YAMAZAKI SHUNPEI

分类号：H01L21/8242;G11C11/405;H01L21/8234;H01L27/088;H01L27/108;H01L29/786

主分类号：H01L21/8242

摘要：PROBLEM TO BE SOLVED: To provide a semiconductor device having a nonvolatile memory cell including a write transistor capable of holding the storage content even in a situation where power is not supplied, having no limit to the number of the write times, using an oxide semiconductor, and having less leakage current (off current) between source and drain in the off state, and a read transistor using a semiconductor material different from the write transistor, and a capacitive element.SOLUTION: Writing of information to a memory cell is performed by supplying a potential to a node FG where one of the source electrode or drain electrode of a write transistor 162, one of the electrodes of a capacitive element 164, and the gate electrode of a read transistor 160 are connected electrically, and making the node hold a predetermined amount of charges. Before and after performing 1×10times of write, variation in the memory window width of the memory cell is within 2%.SELECTED DRAWING: Figure 1