METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING INSULATING LAYERS WITH DIFFERENT THICKNESSES,申请号US20070767060-传众专利搜索

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING INSULATING LAYERS WITH DIFFERENT THICKNESSES

申请公布号：US2008315303(A1)

申请号：US20070767060

申请日期：2007.06.22

申请公布日期：2008.12.25

申请人：

INFINEON TECHNOLOGIES AUSTRIA AG

发明人：VANNUCCI NICOLA;MAIER HUBERT

分类号：H01L29/78;H01L21/311;H01L21/336

主分类号：H01L29/78

摘要：The method of forming a semiconductor structure in a substrate comprises, forming a first trench with a first width We and a second trench with a second width Wc, wherein the first width We is larger than the second width Wc, depositing a protection material, lining the first trench, covering the substrate surface and filling the second trench and removing partially the protection material, wherein a lower portion of the second trench remains filled with the protection material.