SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD,申请号JP20150050682-传众专利搜索

SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

申请公布号：JP2016171229(A)

申请号：JP20150050682

申请日期：2015.03.13

申请公布日期：2016.09.23

申请人：

TOKYO ELECTRON LTD

发明人：MORIYA MITSUHIKO;FUKUNAGA NOBUTAKA;SHIMADA RYO

分类号：H01L21/027;G03F7/20

主分类号：H01L21/027

摘要：PROBLEM TO BE SOLVED: To provide a substrate processing device capable of shortening atmosphere adjustment time, and a substrate processing method.SOLUTION: An energy beam irradiation unit U4 comprises an irradiation unit 54, a transfer unit 56, a gas supply unit 70, a gas discharge unit 80, and a control unit 100. The irradiation unit 54 irradiates a wafer W with an energy beam. The transfer unit 56 transfers the wafer W. The gas supply unit 70 supplies a gas for wafer W processing from an upper discharge port 71. The gas discharge unit 80 discharges the gas for wafer W processing from a discharge port 81. The control unit 100 is configured to control: the transfer unit 56 so as to transport the wafer W to a first position blocking a processing gas passage from the upper discharge port 71 to the discharge port 81; the gas supply unit 70 so as to supply the gas for wafer processing from the upper discharge port 71 when the wafer W is located at the first position; and the irradiation unit 54 so as to irradiate a surface of the wafer W with an energy beam in a state in which the gas for wafer processing supplied by the gas supply unit 70 is interposed on the surface of the wafer W.SELECTED DRAWING: Figure 3