Method of making a semiconductor device using multiple layer sets,申请号US201514863904-传众专利搜索

Method of making a semiconductor device using multiple layer sets

申请公布号：US9455156(B2)

申请号：US201514863904

申请日期：2015.09.24

申请公布日期：2016.09.27

申请人：

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人：Yen Bi-Ming;Li Tsai-Chun;Hu Chun-Ming

分类号：H01L21/311;H01L21/768;H01L21/02;H01L21/027

主分类号：H01L21/311

代理机构：

Haynes and Boone, LLP

代理人：Haynes and Boone, LLP

地址：Hsinchu TW

摘要：A method of making a semiconductor device includes forming an intermediate semiconductor device. The intermediate device includes a substrate; and a dielectric layer over the substrate. The intermediate device includes a first layer set, including a silicon-rich photoresist material, over the dielectric layer. The intermediate device includes a second layer set, including a carbon-rich organic material layer, over the first layer set. The method further includes etching the second layer set to form a tapered opening in the second layer set. The method further includes etching the first layer set to form an opening in the first layer set, wherein etching the first layer set comprises removing the carbon-rich organic material layer. The method further includes etching the dielectric layer using the first layer set as a mask to form an opening in the dielectric layer, wherein etching the dielectric layer comprises reducing a thickness of the first layer set.

主权项：1. A method of making a semiconductor device, the method comprising: forming an intermediate semiconductor device, the intermediate semiconductor device comprising: a substrate;a dielectric layer over the substrate;a first layer set over the dielectric layer, wherein the first layer set comprises a silicon-rich photoresist material;a second layer set over the first layer set, wherein the second layer set comprises a plurality of layers including a carbon-rich organic material layer; and etching the second layer set to form a tapered opening in the second layer set, the tapered opening having sidewalls at an angle with respect to a top surface of the dielectric layer; etching the first layer set to form an opening in the first layer set, wherein etching the first layer set comprises removing the carbon-rich organic material layer; and etching the dielectric layer using the first layer set as a mask to form an opening in the dielectric layer, wherein etching the dielectric layer comprises reducing a thickness of the first layer set.