THERMOELECTRIC MATERIAL HAVING IMPROVED THERMOELECTRIC PERFORMANCE THROUGH ADDITION OF DOPING MATERIAL,申请号WO2015KR14321-传众专利搜索

THERMOELECTRIC MATERIAL HAVING IMPROVED THERMOELECTRIC PERFORMANCE THROUGH ADDITION OF DOPING MATERIAL

申请公布号：WO2016200001(A1)

申请号：WO2015KR14321

申请日期：2015.12.28

申请公布日期：2016.12.15

申请人：

KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE

发明人：RYU, Byung-ki;PARK, Su-dong;KIM, Bong-seo;MIN, Bok-ki;LEE, Ji-eun;LEE, Hee-wong;JOO, Sung-jae

分类号：H01L35/14;H01L35/02;H01L35/16

主分类号：H01L35/14

摘要：The main technical idea of the present invention is a thermoelectric material having an improved thermoelectric performance through the addition of a doping material, wherein a doping material composed of M'Q' is added to a thermoelectric material composed of MQ (M and M' are a metal material; and Q and Q' are selected from the group consisting of oxygen (O), sulfur (S), selenium (Se), tellurium (Te), and a mixture thereof). Thus, a thermoelectric material having an improved thermoelectric performance can be obtained by adding a doping material selected through the comparison of the lattice state and energy barrier value between the thermoelectric material and the doping material. In addition, a thermoelectric material having an improved thermoelectric performance can be obtained by adding a doping material, of which the content added to the thermoelectric material is selectable depending on the thermoelectric characteristics of the doping material.