Ion beam processing apparatus,申请号EP20010109050-传众专利搜索

Ion beam processing apparatus

申请公布号：EP1132946(A1)

申请号：EP20010109050

申请日期：1996.04.26

申请公布日期：2001.09.12

申请人：

HITACHI, LTD.

发明人：ICHIMURA, SATOSHI;SATO, TADASHI;KOBAYASHI, KENZO;OHISHI, SHOTARO;OONUKI, HISAO

分类号：H05H1/46;C23F4/00;H01J27/16;H01J27/18;H01J37/02;H01J37/08;H01J37/30;H01J37/305;H01L21/302;H01L21/3065;(IPC1-7):H01J37/317;H01J37/32;C23C14/22;C23C14/46;C23C16/50;C23C16/02

主分类号：H05H1/46

摘要：<p>When a neutralized plasma is generated in an ion processing apparatus, a cylindrical electrode 8 is set at a negative potential against a processing chamber 23 by a DC power source 18, so that ions in the neutralized plasma can be collected at the cylindrical electrode 8. Electrons 24 equal to the collected ion charge can be supplied uniformly toward the ion beam. Therefore, due to the cylindrical electrode collecting ions, the ion collection area can spread easily. By only generating neutralized plasma of low density, a sufficient volume of ions can be safely collected from the plasma and, at the same time a sufficient volume of electrons can be supplied to the ion beam 25. <IMAGE></p>