CHIP FOR HALL SENSOR,申请号JP19980352942-传众专利搜索

CHIP FOR HALL SENSOR

申请公布号：JP2000183423(A)

申请号：JP19980352942

申请日期：1998.12.11

申请公布日期：2000.06.30

申请人：

HITACHI CABLE LTD

发明人：KUNITAKE EIICHI

分类号：H01L43/06;G01R33/07;(IPC1-7):H01L43/06

主分类号：H01L43/06

摘要：PROBLEM TO BE SOLVED: To suppress a change in unbalanced voltage due to a change in temperature by forming a chip with a semi-insulating GaAs substrate and an undoped GaAs layer of a specified thickness formed on the surface of an electron mobility layer. SOLUTION: This chip consists of a semi-insulating GaAs substrate 1, an electron mobility layer 2 constituted of an n-type Gaps epitaxial layer grown on the substrate 1 by a MOVPE method, an undoped GaAs layer grown on the layer 2. The substrate 1, the electron mobility layer 2, and the undoped GaAs layer 3 are processed by etching into a specified shape, for example, a cross shape to form a magneto sensitive section 4. The magneto sensitive section 4 is installed at a specified place with an electrode and is provided with a protective film. In a region where the thickness of the undoped GaAs layer 3 is 0.3μm or above, unbalanced voltage is reduced.