Memory devices.,申请号EP19930202350-传众专利搜索

Memory devices.

申请公布号：EP0574094(A2)

申请号：EP19930202350

申请日期：1989.02.20

申请公布日期：1993.12.15

申请人：

SONY CORPORATION

发明人：MIYAJI, FUMIO

分类号：G11C7/20;G11C11/419;(IPC1-7):G11C7/00

主分类号：G11C7/20

摘要：<p>A semiconductor memory device such as a static random access memory is provided with a flash-clearing function. The device includes a memory cell array (63) segmented into a plurality of memory cell groups (631 to 63n), and a flash-clear circuit (62) common to the memory cell groups (631 to 63n) and arranged to supply flash-clearing signals (FC1 to FCn) at different timings to the memory cell groups (631 to 63n). <IMAGE></p>

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