Immersible plasma coil assembly and method for operating the same,申请号US201012959653-传众专利搜索

Immersible plasma coil assembly and method for operating the same

申请公布号：US9398680(B2)

申请号：US201012959653

申请日期：2010.12.03

申请公布日期：2016.07.19

申请人：

Lam Research Corporation

发明人：Davis Matthew

分类号：H01L21/3065;C23C16/505;H05H1/46;H01J37/32

主分类号：H01L21/3065

代理机构：

Martine Penilla Group, LLP

代理人：Martine Penilla Group, LLP

地址：Fremont CA US

摘要：A coil assembly includes an encapsulation structure having a coil placement region formed therein. One or more access ports are formed through the encapsulation structure to the coil placement region. The coil placement region is hermetically sealed by the encapsulation structure outside of the one or more access ports. A coil device is disposed within the coil placement region within the encapsulation structure. Terminals of the coil device are accessible through the one or more access ports formed through the encapsulation structure. The encapsulation structure is formed of a material suitable for exposure to a plasma. The coil assembly can be disposed inside of a plasma processing chamber and above a support structure, such that the coil assembly is in exposure to a plasma generated between the coil assembly and the support structure by radiofrequency power supplied to the coil device within the coil assembly.

主权项：1. A coil assembly for plasma generation, comprising: an encapsulation structure including a bottom ceramic plate having a top surface and a bottom surface, a middle ceramic plate having a top surface and a bottom surface, and a top ceramic plate having a top surface and a bottom surface, the middle ceramic plate positioned between the bottom ceramic plate and the top ceramic plate, the bottom ceramic plate having a coil placement region formed as a trench extending into the bottom ceramic plate from the top surface of the bottom ceramic plate, the coil placement region formed to match a coiled shape of a coil device to be placed within the coil placement region, the trench of the coil placement region formed such that adjacently positioned portions of the coil placement region are separated from each other by ceramic material of the bottom ceramic plate, each of the top and middle ceramic plates including a first access port extending through the top and middle ceramic plates to the coil placement region, each of the top and middle ceramic plates including a second access port extending through the top and middle ceramic plates to the coil placement region, each of the first and second access ports sized large enough to enable the coil device to be placed within the coil placement region to pass through each of the first and second access ports, the coil device disposed within the coil placement region of the bottom ceramic plate, the coil device formed to extend from the coil placement region through each of the first and second access ports formed within the middle ceramic plate and the top ceramic plate, wherein the coil placement region is oversized relative to the coil device such that a gap circumscribes the coil device within the coil placement region, wherein the gap within the coil placement region between the coil device and the bottom ceramic plate is exposed through the first and second access ports to an atmospheric pressure environment during operation of the coil assembly for plasma generation; and a cantilevered coil assembly support structure connected to the top surface of the top ceramic plate of the encapsulation structure, wherein the cantilevered coil assembly support structure is defined to extend through a side structure of a chamber within which the coil assembly is disposed, wherein the cantilevered coil assembly support structure is hermetically sealed with the top surface of the top ceramic plate of the encapsulation structure around each of the first and second access ports, and wherein an interior volume of the cantilevered coil assembly support structure provides the atmospheric pressure environment to which the gap within the coil placement region is exposed through the first and second access ports.