Alignment marks for polarized light lithography and method for use thereof,申请号US20050221202-传众专利搜索

Alignment marks for polarized light lithography and method for use thereof

申请公布号：US7687925(B2)

申请号：US20050221202

申请日期：2005.09.07

申请公布日期：2010.03.30

申请人：

INFINEON TECHNOLOGIES AG

发明人：MAROKKEY SAJAN;SARMA CHANDRASEKHAR;GUTMANN ALOIS

分类号：H01L23/544

主分类号：H01L23/544

摘要：Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process.