FinFET with Multiple Dislocation Planes and Method for Forming the Same,申请号US201414585110-传众专利搜索

FinFET with Multiple Dislocation Planes and Method for Forming the Same

申请公布号：US2016190129(A1)

申请号：US201414585110

申请日期：2014.12.29

申请公布日期：2016.06.30

申请人：

Taiwan Semiconductor Manufacturing Company, Ltd.

发明人：Huang Chih-Hsiang;Lin Da-Wen

分类号：H01L27/088;H01L21/265;H01L21/8234;H01L21/324;H01L29/06;H01L29/78

主分类号：H01L27/088

地址：Hsin-Chu TW

摘要：A device comprises a first semiconductor fin over a substrate, a second semiconductor fin over the substrate, wherein the first semiconductor fin and the second semiconductor fin are separated by a first isolation region, a first drain/source region coupled to the first semiconductor fin and the second semiconductor fin and a first dislocation plane underlying the first isolation region, wherein the first dislocation plane extends in a first direction in parallel with a longitudinal axis of the first semiconductor fin.

主权项：1. A device comprising: a first semiconductor fin over a substrate; a second semiconductor fin over the substrate, wherein the first semiconductor fin and the second semiconductor fin are separated by a first isolation region; a first drain/source region coupled to the first semiconductor fin and the second semiconductor fin; and a first dislocation plane underlying the first isolation region, wherein the first dislocation plane extends in a first direction in parallel with a longitudinal axis of the first semiconductor fin.