SEMICONDUCTOR STORAGE DEVICE,申请号US201514807352-传众专利搜索

SEMICONDUCTOR STORAGE DEVICE

申请公布号：US2016268277(A1)

申请号：US201514807352

申请日期：2015.07.23

申请公布日期：2016.09.15

申请人：

KABUSHIKI KAISHA TOSHIBA

发明人：NAGASHIMA Satoshi

分类号：H01L27/115;H01L21/28;H01L29/423

主分类号：H01L27/115

地址：Minato-ku JP

摘要：A semiconductor storage device according to an embodiment comprises stacks comprising insulating films and first wires that are alternately stacked. Semiconductor parts are provided in the stacks. The longitudinal direction of the semiconductor parts is a stacking direction of the insulating films and the first wires. Charge accumulation layers are provided between the first wires and the semiconductor parts and a plurality of the charge accumulation layers are provided corresponding to one of the semiconductor parts in a cross-section in a direction perpendicular to the longitudinal direction of the semiconductor parts. A width of first side surfaces of the semiconductor parts on which the charge accumulation layers are provided is larger at bottom ends of the semiconductor parts than at top ends of the semiconductor parts.

主权项：1. A semiconductor storage device comprising: stacks comprising insulating films and first wires alternately stacked; a conductive part provided in the stacks, a longitudinal direction of the conductive part being a stacking direction of the insulating films and the first wires; and memory cells between the first wires and the conductive part, a plurality of the memory cells being provided with the conductive part in a cross-section in a direction perpendicular to the longitudinal direction of the conductive part, wherein a width of first side surfaces of the conductive part on which the memory cells are provided is larger at a bottom end of the conductive part than at a top end of the conductive part, the width of the first side surfaces being a width in a longitudinal direction of the first wires, and a width of second side surfaces between the first side surfaces of the conductive part is smaller at the bottom end of the conductive part than at the top end of the conductive part, the width of the second side surfaces being a width in a direction intersecting with the longitudinal direction of the conductive part and the longitudinal direction of the first wires.