Semiconductor component e.g. MOS field effect transistor, has intermediate zones arranged on ditch walls, where intermediate zones are high-impedance with respect to loading compensation zones and drift zones,申请号DE20071044414-传众专利搜索

Semiconductor component e.g. MOS field effect transistor, has intermediate zones arranged on ditch walls, where intermediate zones are high-impedance with respect to loading compensation zones and drift zones

申请公布号：DE102007044414(A1)

申请号：DE20071044414

申请日期：2007.09.17

申请公布日期：2009.03.19

申请人：

INFINEON TECHNOLOGIES AUSTRIA AG

发明人：SEDLMAIER, STEFAN;MAUDER, ANTON;SCHULZE, HANS-JOACHIM;RIEGER, WALTER

分类号：H01L29/06;H01L21/328;H01L21/336;H01L29/36;H01L29/739;H01L29/78

主分类号：H01L29/06

摘要：<p>The semiconductor component (1) has a crystalline semiconductor body (2) including a drift stretching structure (3) with drift zones (4) that are provided in a ditch structure (5) with ditch walls (6). The drift stretching structure has loading compensation zones (7) that are provided with complementary conduction types for adjacent drift zones, and intermediate zones (8) provided between the drift zones and the loading compensation zones. The intermediate zones are arranged on the ditch walls. The intermediate zones are high-impedance with respect to the compensation zones and drift zones. Independent claims are also included for the following: (1) a method for producing semiconductor chips on a semiconductor component (2) a method for producing multiple semiconductor components.</p>