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Semiconductor Device and Method of Manufacturing the Same
申请公布号：US2009057905(A1)
申请号：US20080199534
申请日期：2008.08.27
申请公布日期：2009.03.05
发明人：KEUM DONG YEAL
分类号：H01L21/768;H01L23/532
主分类号：H01L21/768
摘要：A metal interconnection layout for a semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device can maintain a minimum design rule and secure a distance between via holes to inhibit a metal bridge phenomenon from being generated. The semiconductor device comprises a substrate, an interlayer dielectric, a first metal interconnection, and a second metal interconnection parallel to the first metal interconnection. The interlayer dielectric can be disposed on the substrate. The first metal interconnection is connected to the substrate or lower interconnect through at least one first via hole in the interlayer dielectric. The second metal interconnection is adjacent to the first metal interconnection and can be connected to the substrate or another lower interconnect through at least one second via hole in the interlayer dielectric. The first via hole and the second via hole are staggered from each other along the first metal interconnection and the second metal interconnection, respectively.