TREATMENT OF DIAGONALLY VAPOR DEPOSITED AND ORIENTED SIO FILM,申请号JP19880160761-传众专利搜索

TREATMENT OF DIAGONALLY VAPOR DEPOSITED AND ORIENTED SIO FILM

申请公布号：JPH0212126(A)

申请号：JP19880160761

申请日期：1988.06.30

申请公布日期：1990.01.17

申请人：

TOSHIBA CORP

发明人：AOYAMA AKIKO

分类号：G02F1/1337

主分类号：G02F1/1337

摘要：<p>PURPOSE:To uniformly stabilize the entire part of the diagonally vapor deposited and oriented SiO film and to improve the orienting power of a liquid crystal by annealing the diagonally vapor deposited and oriented SiO film formed on a substrate, then irradiating the oriented film with UV light. CONSTITUTION:The diagonally vapor deposited and oriented SiO film formed on the substrate is annealed and is then irradiated with the UV light, by which the greater part of the SiO constituting the oriented film is converted to SiO2 not only in the surface thereof but over the entire part in the film thickness direction as well. As a result, the entire part of the oriented film is uniformly stabilized. The angle of inclination of the liquid crystal to the substrate is decreased and the orienting power is intensified when a liquid crystal is assembled by packing the liquid crystal, etc., between the substrates formed with these oriented films.</p>