METHOD FOR OBSERVING PATTERN BY USING SACRIFICIAL LAYER,申请号KR20010089195-传众专利搜索

METHOD FOR OBSERVING PATTERN BY USING SACRIFICIAL LAYER

申请公布号：KR20030058669(A)

申请号：KR20010089195

申请日期：2001.12.31

申请公布日期：2003.07.07

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：OH, SE YEONG

分类号：H01L21/027;(IPC1-7):H01L21/027

主分类号：H01L21/027

摘要：PURPOSE: A method for observing a pattern by using a sacrificial layer is provided to be capable of improving pattern width slimming phenomenon by preventing the vaporization of solvent existing in the pattern. CONSTITUTION: An etch object layer(1) is formed on a semiconductor substrate. A photoresist pattern(3) is then formed on the etch object layer. A sacrificial layer(5) is coated on the upper portion of the photoresist pattern. Then, the line width of the photoresist pattern is measured by using an SEM(Scanning Electron Microscope) process. At this time, the vaporization of solvent of the photoresist pattern is prevented by the sacrificial layer. Preferably, the sacrificial layer is made of one selected from a group consisting of an oxide layer, a poly layer, a nitride layer, a gold layer, and a tungsten layer. Preferably, the sacrificial layer has a thickness of 20-200 angstrom.