Plasma atomic layer deposition,申请号US201414231317-传众专利搜索

Plasma atomic layer deposition

申请公布号：US9637823(B2)

申请号：US201414231317

申请日期：2014.03.31

申请公布日期：2017.05.02

申请人：

ASM IP HOLDING B.V.

发明人：Knoops Harm C. M.;de Peuter Koen;Kessels Wilhelmus M. M.

分类号：H01L21/44;C23C16/52;C23C16/34;C23C16/455

主分类号：H01L21/44

代理机构：

Knobbe, Martens, Olson & Bear LLP

代理人：Knobbe, Martens, Olson & Bear LLP

地址：Almere NL

摘要：Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.

主权项：1. A method of depositing a layer of dielectric SiN by plasma atomic layer deposition, the method comprising: providing a substrate in a reaction space; in a first phase, contacting the substrate with a silicon precursor to adsorb an adsorbed species of the silicon precursor on the substrate; and in a second phase, contacting the substrate with excited nitrogen species to react with the adsorbed species, wherein the excited nitrogen species is supplied to or formed in the reaction space for greater than about 0.1 s, and wherein the amount of reactive species in the reaction space is reduced by at least 63.2% in an average time of less than about 1.0 s during the second phase, and wherein the first phase and the second phase are cyclically repeated to form more than a monolayer of dielectric SiN.