薄膜トランジスタ及び薄膜トランジスタの製造方法,申请号JP20130554137-传众专利搜索

薄膜トランジスタ及び薄膜トランジスタの製造方法

申请公布号：JP6082911(B2)

申请号：JP20130554137

申请日期：2013.05.29

申请公布日期：2017.02.22

申请人：

株式会社ＪＯＬＥＤ

发明人：岸田悠治;佐藤栄一;川島孝啓

分类号：H01L21/336;H01L29/786;H01L51/50;H05B33/08;H05B33/10

主分类号：H01L21/336

摘要：A thin-film transistor includes: a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer opposed to the gate electrode with the gate insulating layer therebetween; a protective layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode each of which has at least a portion located above the protective layer. The protective layer includes an altered layer which has at least a portion contacting the semiconductor layer, and which is generated by alteration of a surface layer of the protective layer in a region exposed from the source electrode and the drain electrode. A relational expression of Log10 Nt&nlE;0.0556&thetas;+16.86 is satisfied where Nt (cm−3) represents a defect density of the semiconductor layer and &thetas; (°) represents a taper angle of an edge portion of the protective layer.