有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、非発光性有機半導体デバイス用塗布液、有機トランジスタの製造方法、有機半導体膜の製造方法、非発光性有機半導体デバイス用有機半導体膜、有機半導体材料の合成方法,申请号JP20150049036-传众专利搜索

有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、非発光性有機半導体デバイス用塗布液、有機トランジスタの製造方法、有機半導体膜の製造方法、非発光性有機半導体デバイス用有機半導体膜、有機半導体材料の合成方法

申请公布号：JP6082927(B2)

申请号：JP20150049036

申请日期：2015.03.12

申请公布日期：2017.02.22

申请人：

富士フイルム株式会社;国立大学法人東京大学

发明人：津山博昭;福▲崎▼ 英治;小柳雅史;野村公篤;宇佐美由久;北村哲;渡邉哲也;岡本敏宏;竹谷純一

分类号：H01L51/30;C07B61/00;C07D495/14;C07D517/14;H01L29/786;H01L51/05;H01L51/40;H01L51/46

主分类号：H01L51/30

摘要：Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material. (X represents an oxygen, sulfur, selenium, or tellurium atom or NR 5 ; Y and Z each represents CR 6 , an oxygen, sulfur, selenium, or nitrogen atom, or NR 7 ; a ring containing Y and Z is an aromatic heterocycle; any one of R 1 and R 2 and the aromatic heterocycle containing Y and Z or any one of R 3 and R 4 and a benzene ring may be bonded to each other through a specific divalent linking group; R 1 , R 2 , and R 5 to R 8 each represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; R 3 and R 4 each represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2.)