SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONTROL APPARATUS,申请号US201615157040-传众专利搜索

SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONTROL APPARATUS

申请公布号：US2017019093(A1)

申请号：US201615157040

申请日期：2016.05.17

申请公布日期：2017.01.19

申请人：

RENESAS ELECTRONICS CORPORATION

发明人：KANDA Ryo;Yamazaki Koichi;Kuroiwa Hiroshi;Maeda Masatoshi;Toda Tetsu

分类号：H03K17/082;H03K17/567;H03K5/24;H03K3/356;H03K5/01

主分类号：H03K17/082

地址：Tokyo JP

摘要：A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been determined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.

主权项：1. A semiconductor device that includes a floating terminal to be coupled to a floating voltage source, a termination area having a ring-like shape, a first area that is provided outside the termination area and that a circuit configured to operate at a first power supply voltage on the basis of a reference voltage is formed, a second area that is provided inside the termination area and that a circuit configured to operate at a second power supply voltage on the basis of the floating voltage is formed and that is configured by one semiconductor chip, comprising: a low side driver that is formed in the first area and drives a low side transistor that is provided outside the semiconductor device; a high side driver that is formed in the second area and drives a high side transistor that is provided outside the semiconductor device; a level shift circuit that converts a signal that has been generated in the first area and is based on the reference voltage into a signal that is based on the floating voltage and outputs the signal so converted to the second area; a first transistor that is formed in the termination area, is arranged between the floating terminal and a first sense node, and is driven at the first power supply voltage; and a fault detection circuit that is formed in the first area and detects presence of a fault when a voltage of the first sense node is higher than a first decision voltage that has been determined in advance in a period of time that the low side driver is driving the low side transistor into an ON state.