Light emitting device and method of manufacturing the same,申请号US201514940720-传众专利搜索

Light emitting device and method of manufacturing the same

申请公布号：US9543475(B2)

申请号：US201514940720

申请日期：2015.11.13

申请公布日期：2017.01.10

申请人：

SAMSUNG ELECTRONICS CO., LTD

发明人：Lim Jin-young;Sakong Tan;Kim Byoung-kyun;Kim Jong-hak

分类号：H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L21/66;G01R31/26;H01L33/24;H01L33/32;H01L33/22;H01L33/06;H01L33/00

主分类号：H01L29/06

代理机构：

Harness, Dickey & Pierce, PLC

代理人：Harness, Dickey & Pierce, PLC

地址：Gyeonggi-do KR

摘要：A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved.

主权项：1. A light-emitting device comprising: a first conductive type semiconductor layer; a second conductive type semiconductor layer; an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer including a plurality of V-pits; and a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the layer-quality improvement layer including a plurality of V-pits, each of the plurality of V-pits of the layer quality improvement layer having substantially same size and shape as corresponding ones of the plurality of V-pits of the active layer, wherein the layer-quality improvement layer is a group III-V semiconductor layer including Al or In.