Method for forming patterns for semiconductor device,申请号US201514741426-传众专利搜索

Method for forming patterns for semiconductor device

申请公布号：US9536751(B2)

申请号：US201514741426

申请日期：2015.06.16

申请公布日期：2017.01.03

申请人：

UNITED MICROELECTRONICS CORP.

发明人：Fu Tzu-Hao;Cheng Home-Been;Chu Ci-Dong;Hsieh Tsung-Yin

分类号：H01L21/308;H01L21/768

主分类号：H01L21/308

代理人：Hsu Winston;Margo Scott

地址：Hsin-Chu TW

摘要：A method for forming patterns for semiconductor device includes following steps. A substrate is provided. The substrate includes a hard mask layer and a sacrificial layer formed thereon. A plurality of spacer patterns parallel with each other are formed on the substrate. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion the first blocking layer are formed on the substrate after forming the first blocking layer. Next, the sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers and the second blocking layer being used as etching masks to form a patterned hard mask layer on the substrate.

主权项：1. A method for forming patterns for semiconductor device comprising: providing a substrate, the substrate comprising a hard mask layer and a sacrificial layer formed thereon; forming a plurality of spacer patterns parallel with each other on the substrate, the spacer patterns being directly formed on the sacrificial layer; removing portions of the sacrificial layer to form a plurality of recesses in the sacrificial layer; forming a plurality of first blocking layers respectively in the recesses; forming a plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion of the first blocking layers on the substrate after forming the first blocking layers; and etching the sacrificial layer and the hard mask layer with the spacer patterns, the first blocking layers and the second blocking layers serving as etching masks to form a patterned hard mask layer on the substrate.