PHOTOVOLTAIC DEVICES WITH FINE-LINE METALLIZATION AND METHODS FOR MANUFACTURE
申请公布号:US2016329440(A1)
申请号:US201514707697
申请日期:2015.05.08
申请公布日期:2016.11.10
发明人:TURNER Adrian Bruce;EGGLESTON Bonneville Dudgeon;SCHULTZ-WITTMANN Oliver;CRAFTS Douglas Edward
分类号:H01L31/02;H01L31/0216
主分类号:H01L31/02
地址:San Jose CA US
摘要:A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.
主权项:1. A method for use in forming a photovoltaic device, comprising: forming a metal film on the doped semiconductor; forming a patterned etch resist on the metal film; etching the metal film; forming a dielectric layer on the doped semiconductor and the etch resist; and applying a laser having a wavelength absorbable by the patterned etch resist through the dielectric layer to the patterned etch resist to remove the patterned etch resist.
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